Reduced electron back-injection in Al2O3/AlO x/Al2O3/graphene charge-trap memory devices

Sejoon Lee; Emil B. Song; Sung Min Kim; Youngmin Lee; David H. Seo; Sunae Seo; Kang L. Wang

doi:10.1063/1.4770381

Reduced electron back-injection in Al₂O₃/AlO _x/Al₂O₃/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, Youngmin Lee, David H. Seo, Sunae Seo, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A graphene charge-trap memory is devised using a single-layer graphene channel with an Al₂O₃/AlO_x/Al₂O ₃ oxide stack, where the ion-bombarded AlO_x layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlO_x compared to Al₂O₃ reduces the potential drop in the control oxide Al₂O₃ and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.

Original language	English
Article number	243109
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770381
Publication status	Published - 2012 Dec 10

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4770381

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title = "Reduced electron back-injection in Al2O3/AlO x/Al2O3/graphene charge-trap memory devices",

abstract = "A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O 3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential drop in the control oxide Al2O3 and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.",

author = "Sejoon Lee and Song, {Emil B.} and {Min Kim}, Sung and Youngmin Lee and Seo, {David H.} and Sunae Seo and Wang, {Kang L.}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (Grant Nos. NRF-2012-0006943 and NRF-2012-00109) funded by the Korean government of Ministry of Education, Science, and Technology (MEST) and in part by Functional Engineered Nano Architectonics (FENA).",

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AU - Song, Emil B.

AU - Min Kim, Sung

AU - Lee, Youngmin

AU - Seo, David H.

AU - Seo, Sunae

AU - Wang, Kang L.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (Grant Nos. NRF-2012-0006943 and NRF-2012-00109) funded by the Korean government of Ministry of Education, Science, and Technology (MEST) and in part by Functional Engineered Nano Architectonics (FENA).

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N2 - A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O 3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential drop in the control oxide Al2O3 and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.

AB - A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O 3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential drop in the control oxide Al2O3 and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.

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Reduced electron back-injection in Al₂O₃/AlO _x/Al₂O₃/graphene charge-trap memory devices

Abstract

All Science Journal Classification (ASJC) codes

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