Abstract
The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.
Original language | English |
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Article number | 262504 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2010 Jun 28 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)