Abstract
The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.
| Original language | English |
|---|---|
| Article number | 262504 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 2010 Jun 28 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO. / Liu, S. H.; Hsu, H. S.; Venkataiah, G.; Qi, Xiao-Ding; Lin, C. R.; Lee, J. F.; Liang, K. S.; Huang, Jung-Chun.
In: Applied Physics Letters, Vol. 96, No. 26, 262504, 28.06.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO
AU - Liu, S. H.
AU - Hsu, H. S.
AU - Venkataiah, G.
AU - Qi, Xiao-Ding
AU - Lin, C. R.
AU - Lee, J. F.
AU - Liang, K. S.
AU - Huang, Jung-Chun
PY - 2010/6/28
Y1 - 2010/6/28
N2 - The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.
AB - The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.
UR - http://www.scopus.com/inward/record.url?scp=77954346311&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954346311&partnerID=8YFLogxK
U2 - 10.1063/1.3456381
DO - 10.1063/1.3456381
M3 - Article
AN - SCOPUS:77954346311
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
M1 - 262504
ER -