Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO

S. H. Liu, H. S. Hsu, G. Venkataiah, Xiao-Ding Qi, C. R. Lin, J. F. Lee, K. S. Liang, Jung-Chun Huang

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.

Original languageEnglish
Article number262504
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
Publication statusPublished - 2010 Jun 28

Fingerprint

ferromagnetism
conduction
polarons
room temperature
Curie temperature
electrical properties
charge transfer
magnetic properties
annealing
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, S. H. ; Hsu, H. S. ; Venkataiah, G. ; Qi, Xiao-Ding ; Lin, C. R. ; Lee, J. F. ; Liang, K. S. ; Huang, Jung-Chun. / Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO. In: Applied Physics Letters. 2010 ; Vol. 96, No. 26.
@article{f1e031c9456449e1a2e6e6f34339f44b,
title = "Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO",
abstract = "The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5{\%} V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.",
author = "Liu, {S. H.} and Hsu, {H. S.} and G. Venkataiah and Xiao-Ding Qi and Lin, {C. R.} and Lee, {J. F.} and Liang, {K. S.} and Jung-Chun Huang",
year = "2010",
month = "6",
day = "28",
doi = "10.1063/1.3456381",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO. / Liu, S. H.; Hsu, H. S.; Venkataiah, G.; Qi, Xiao-Ding; Lin, C. R.; Lee, J. F.; Liang, K. S.; Huang, Jung-Chun.

In: Applied Physics Letters, Vol. 96, No. 26, 262504, 28.06.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO

AU - Liu, S. H.

AU - Hsu, H. S.

AU - Venkataiah, G.

AU - Qi, Xiao-Ding

AU - Lin, C. R.

AU - Lee, J. F.

AU - Liang, K. S.

AU - Huang, Jung-Chun

PY - 2010/6/28

Y1 - 2010/6/28

N2 - The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.

AB - The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.

UR - http://www.scopus.com/inward/record.url?scp=77954346311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954346311&partnerID=8YFLogxK

U2 - 10.1063/1.3456381

DO - 10.1063/1.3456381

M3 - Article

AN - SCOPUS:77954346311

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262504

ER -