Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO

S. H. Liu; H. S. Hsu; G. Venkataiah; X. Qi; C. R. Lin; J. F. Lee; K. S. Liang; J. C.A. Huang

doi:10.1063/1.3456381

Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO

S. H. Liu, H. S. Hsu, G. Venkataiah, X. Qi, C. R. Lin, J. F. Lee, K. S. Liang, J. C.A. Huang

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22 Citations (Scopus)

Abstract

The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.

Original language	English
Article number	262504
Journal	Applied Physics Letters
Volume	96
Issue number	26
DOIs	https://doi.org/10.1063/1.3456381
Publication status	Published - 2010 Jun 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3456381

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AU - Liu, S. H.

AU - Hsu, H. S.

AU - Venkataiah, G.

AU - Qi, X.

AU - Lin, C. R.

AU - Lee, J. F.

AU - Liang, K. S.

AU - Huang, J. C.A.

PY - 2010/6/28

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