Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO

S. H. Liu, H. S. Hsu, G. Venkataiah, X. Qi, C. R. Lin, J. F. Lee, K. S. Liang, J. C.A. Huang

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.

Original languageEnglish
Article number262504
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
Publication statusPublished - 2010 Jun 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Reduced room-temperature ferromagnetism in intermediate conducting regime of v doped ZnO'. Together they form a unique fingerprint.

Cite this