Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

Kai Yuen Lam, Jung Sheng Huang, Yong Jie Zou, Kuan Wei Lee, Yeong Her Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies.

Original languageEnglish
Article number861
JournalMaterials
Volume9
Issue number11
DOIs
Publication statusPublished - 2016 Nov

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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