Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

Shih Chen Shi, Chia Fu Chen, Geng Ming Hsu, Jih Shang Hwang, Surojit Chattopadhyay, Zon Huang Lan, Kuei Hsien Chen, Li Chyong Chen

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21 Citations (Scopus)

Abstract

We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K.

Original languageEnglish
Article number203103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number20
DOIs
Publication statusPublished - 2005 Nov 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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