Reduction in turn-on voltage in GaInNAs and InGaAs-based double-heterojunction bipolar transistors

Cheng Hsien Wu, Yan Kuin Su, Shang Chin Wei, Shoou Jinn Chang, Chi Cheong Sio, Wei Chang Chen

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1 Citation (Scopus)

Abstract

A new quaternary material of GaInNAs has been proposed as base material for GaAs-based double-heterojunction bipolar transistors (DHBTs). The used InGaAs as base material results in the lower band gap energy of the base layer in heterojunction bipolar transistors (HBTs) followed by a smaller turn-on voltage. However, the compressive strain induced by the InGaAs grown on GaAs diminishes the influence of indium-addition induced band gap energy reduction, and thus abate turn-on voltage reduction. By incorporating suitable amounts of indium (In) and nitrogen (N) into GaAs, a smaller band gap material of GaInNAs lattice-matched to GaAs substrate can be obtained. In this study, N-p-n InGaP/Ga0.985-In0.15N0.005A0.995/ GaAs DHBTs have been demonstrated. A turn-on voltage reduction of 215 mV compared to that of the conventional HBT with a GaAs base layer was obtained. The device has a peak current gain of 85 and shows good high-frequency characteristics of fT and fMAX, which are both higher than 40 GHz.

Original languageEnglish
Pages (from-to)1919-1921
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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