Abstract
AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.
| Original language | English |
|---|---|
| Pages (from-to) | 353-358 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 798 |
| Publication status | Published - 2003 Dec 1 |
| Event | GaN and Related Alloys - 2003 - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 5 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer. / Chi, G. C.; Sheu, J. K.; Lee, M. L.; Kao, C. J.; Su, Y. K.; Chang, S. J.; Lai, W. C.
In: Materials Research Society Symposium - Proceedings, Vol. 798, 01.12.2003, p. 353-358.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer
AU - Chi, G. C.
AU - Sheu, J. K.
AU - Lee, M. L.
AU - Kao, C. J.
AU - Su, Y. K.
AU - Chang, S. J.
AU - Lai, W. C.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.
AB - AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.
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M3 - Conference article
AN - SCOPUS:2942635580
VL - 798
SP - 353
EP - 358
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -