Abstract
AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.
Original language | English |
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Pages (from-to) | 353-358 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 798 |
DOIs | |
Publication status | Published - 2003 |
Event | GaN and Related Alloys - 2003 - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 5 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering