Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

G. C. Chi, J. K. Sheu, M. L. Lee, C. J. Kao, Y. K. Su, S. J. Chang, W. C. Lai

Research output: Contribution to journalConference articlepeer-review

Abstract

AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

Original languageEnglish
Pages (from-to)353-358
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
Publication statusPublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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