Reduction of surface recombination current by optimized ledge technology

K. Y. Chu; L. Y. Chen; T. P. Chen; C. W. Hung; T. H. Tsai; L. A. Chen; S. Y. Cheng; Wen-Chau Liu

doi:10.1109/EDSSC.2007.4450228

Reduction of surface recombination current by optimized ledge technology

K. Y. Chu, L. Y. Chen, T. P. Chen, C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, the influence of various emitter ledge thicknesses on the performances of InGaP/GaAs heterojunction bipolar transistors is investigated based on the simulation data. The undesired surface channel phenomenon at the exposed base surface between base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter ledge passivation would cause serious surface recombination at the edge of emitter ledge. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of emitter ledge is a critical and should be carefully considered. From simulated results, the optimum emitter ledge thickness of InGaP/GaAs HBT is 100-200 Å.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	725-728
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450228
Publication status	Published - 2007 Dec 1
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450228

Cite this

Chu, K. Y., Chen, L. Y., Chen, T. P., Hung, C. W., Tsai, T. H., Chen, L. A., Cheng, S. Y., & Liu, W-C. (2007). Reduction of surface recombination current by optimized ledge technology. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 725-728). [4450228] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450228

@inproceedings{270135dd0ebe46ce8bd130ee14f541c8,

title = "Reduction of surface recombination current by optimized ledge technology",

abstract = "In this work, the influence of various emitter ledge thicknesses on the performances of InGaP/GaAs heterojunction bipolar transistors is investigated based on the simulation data. The undesired surface channel phenomenon at the exposed base surface between base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter ledge passivation would cause serious surface recombination at the edge of emitter ledge. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of emitter ledge is a critical and should be carefully considered. From simulated results, the optimum emitter ledge thickness of InGaP/GaAs HBT is 100-200 {\AA}.",

author = "Chu, {K. Y.} and Chen, {L. Y.} and Chen, {T. P.} and Hung, {C. W.} and Tsai, {T. H.} and Chen, {L. A.} and Cheng, {S. Y.} and Wen-Chau Liu",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2007.4450228",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "725--728",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Chu, KY, Chen, LY, Chen, TP, Hung, CW, Tsai, TH, Chen, LA, Cheng, SY & Liu, W-C 2007, Reduction of surface recombination current by optimized ledge technology. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450228, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 725-728, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450228

Reduction of surface recombination current by optimized ledge technology. / Chu, K. Y.; Chen, L. Y.; Chen, T. P. et al.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 725-728 4450228 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reduction of surface recombination current by optimized ledge technology

AU - Chu, K. Y.

AU - Chen, L. Y.

AU - Chen, T. P.

AU - Hung, C. W.

AU - Tsai, T. H.

AU - Chen, L. A.

AU - Cheng, S. Y.

AU - Liu, Wen-Chau

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this work, the influence of various emitter ledge thicknesses on the performances of InGaP/GaAs heterojunction bipolar transistors is investigated based on the simulation data. The undesired surface channel phenomenon at the exposed base surface between base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter ledge passivation would cause serious surface recombination at the edge of emitter ledge. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of emitter ledge is a critical and should be carefully considered. From simulated results, the optimum emitter ledge thickness of InGaP/GaAs HBT is 100-200 Å.

AB - In this work, the influence of various emitter ledge thicknesses on the performances of InGaP/GaAs heterojunction bipolar transistors is investigated based on the simulation data. The undesired surface channel phenomenon at the exposed base surface between base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter ledge passivation would cause serious surface recombination at the edge of emitter ledge. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of emitter ledge is a critical and should be carefully considered. From simulated results, the optimum emitter ledge thickness of InGaP/GaAs HBT is 100-200 Å.

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BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Reduction of surface recombination current by optimized ledge technology

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