Reduction of surface recombination current by optimized ledge technology

K. Y. Chu, L. Y. Chen, T. P. Chen, C. W. Hung, T. H. Tsai, L. A. Chen, S. Y. Cheng, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the influence of various emitter ledge thicknesses on the performances of InGaP/GaAs heterojunction bipolar transistors is investigated based on the simulation data. The undesired surface channel phenomenon at the exposed base surface between base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter ledge passivation would cause serious surface recombination at the edge of emitter ledge. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of emitter ledge is a critical and should be carefully considered. From simulated results, the optimum emitter ledge thickness of InGaP/GaAs HBT is 100-200 Å.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages725-728
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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