Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method

Y. D. Woo, H. I. Lee, T. W. Kang, T. W. Kim, K. L. Wang

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)1340-1343
Number of pages4
JournalJournal of Materials Science Letters
Issue number19
Publication statusPublished - 1995 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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