Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method

  • Y. D. Woo
  • , H. I. Lee
  • , T. W. Kang
  • , T. W. Kim
  • , K. L. Wang

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)1340-1343
Number of pages4
JournalJournal of Materials Science Letters
Volume14
Issue number19
DOIs
Publication statusPublished - 1995 Jan

All Science Journal Classification (ASJC) codes

  • General Materials Science

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