Refractory metal silicide formation by ion implantation

K. L. Wang, S. W. Chiang, F. Bacon, R. F. Reihl

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A systematic study of interface mixing of transition metal-Si structures by ion implantation was carried out. High resolution Auger analyses at the mixed region of the implanted samples showed an energy shift of the Auger Si LVV transition and a change in the spectrum relative to that of elemental silicon. The elemental depth distribution obtained using Auger electron spectroscopy combined with ion sputtering illustrated a composition plateau for the ion-implanted structures. The X-ray diffraction data show the presence of silicides. These results illustrated metal silicide formation and a reduction in the thermal reaction barrier for forming refractory metal silicides by ion implantation.

Original languageEnglish
Pages (from-to)239-244
Number of pages6
JournalThin Solid Films
Volume74
Issue number2
DOIs
Publication statusPublished - 1980 Dec 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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