Regenerative Switching Phenomenon of a GaAs Metal-n-δ(P+)-n-n+ Structure

Der Feng Guo, Wen Chen Yeou, Wen Shiung Lour, Wei Chou Hsu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A new GaAs regenerative switching device with metal-n-δ(p+)-n-n+ structure has been fabricated and demonstrated. An In GaAs delta-doped quantum well was employed to provide the potential barrier for carriers transport and improve the confinement effect of holes. Due to the sequential avalanche multiplication near the reverse biased n-GaAs layer and the Schottky-semiconductor (M-S) junction, an interestingly double S-shaped negative-differential-resistance (NDR) phenomenon and three different operation points were obtained at low temperature. However, only single S-shaped NDR behavior was observed at room temperature due to the higher thermal energy and poor carrier confinement effect. Therefore, with an appropriate adjustments on device parameters, the proposed structure is suitable for switching device and multiple-value logic circuit applications.

Original languageEnglish
Pages (from-to)L1011-L1013
JournalJapanese journal of applied physics
Issue number7
Publication statusPublished - 1993 Jul

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Regenerative Switching Phenomenon of a GaAs Metal-n-δ(P+)-n-n+ Structure'. Together they form a unique fingerprint.

Cite this