Regenerative switching properties of a sawtooth-doping-superlattice- collector bipolar transistor

Wen-Chau Liu, Chung Yih Sun, Der Feng Guo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A molecular beam epitaxially grown GaAs three-terminal switching device with controllable S-shaped negative differential resistance (NDR) and switching voltages has been fabricated and demonstrated. The current-voltage and switching characteristics of this device are excellent and reproducible. The switching voltage VS=9.6 V and holding voltage VH=5.1 V are obtained under two-terminal operation. If a base current IB is applied, this device exhibits a controllable S-shaped NDR phenomena both at the forward and reverse IB conditions. A bipolar transistor behavior with a current gain of over 20 is further achieved when the forward IB is employed. The proposed device having good potential for high speed and switching circuit applications has been shown by the results.

Original languageEnglish
Pages (from-to)471-473
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number4
DOIs
Publication statusPublished - 1992 Dec 1

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bipolar transistors
accumulators
electric potential
switching circuits
molecular beams
high speed

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Regenerative switching properties of a sawtooth-doping-superlattice- collector bipolar transistor",
abstract = "A molecular beam epitaxially grown GaAs three-terminal switching device with controllable S-shaped negative differential resistance (NDR) and switching voltages has been fabricated and demonstrated. The current-voltage and switching characteristics of this device are excellent and reproducible. The switching voltage VS=9.6 V and holding voltage VH=5.1 V are obtained under two-terminal operation. If a base current IB is applied, this device exhibits a controllable S-shaped NDR phenomena both at the forward and reverse IB conditions. A bipolar transistor behavior with a current gain of over 20 is further achieved when the forward IB is employed. The proposed device having good potential for high speed and switching circuit applications has been shown by the results.",
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Regenerative switching properties of a sawtooth-doping-superlattice- collector bipolar transistor. / Liu, Wen-Chau; Sun, Chung Yih; Guo, Der Feng.

In: Applied Physics Letters, Vol. 61, No. 4, 01.12.1992, p. 471-473.

Research output: Contribution to journalArticle

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AU - Liu, Wen-Chau

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N2 - A molecular beam epitaxially grown GaAs three-terminal switching device with controllable S-shaped negative differential resistance (NDR) and switching voltages has been fabricated and demonstrated. The current-voltage and switching characteristics of this device are excellent and reproducible. The switching voltage VS=9.6 V and holding voltage VH=5.1 V are obtained under two-terminal operation. If a base current IB is applied, this device exhibits a controllable S-shaped NDR phenomena both at the forward and reverse IB conditions. A bipolar transistor behavior with a current gain of over 20 is further achieved when the forward IB is employed. The proposed device having good potential for high speed and switching circuit applications has been shown by the results.

AB - A molecular beam epitaxially grown GaAs three-terminal switching device with controllable S-shaped negative differential resistance (NDR) and switching voltages has been fabricated and demonstrated. The current-voltage and switching characteristics of this device are excellent and reproducible. The switching voltage VS=9.6 V and holding voltage VH=5.1 V are obtained under two-terminal operation. If a base current IB is applied, this device exhibits a controllable S-shaped NDR phenomena both at the forward and reverse IB conditions. A bipolar transistor behavior with a current gain of over 20 is further achieved when the forward IB is employed. The proposed device having good potential for high speed and switching circuit applications has been shown by the results.

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