TY - JOUR
T1 - Relationships of electrical properties and melting threshold in laser-annealed ion-implanted silicon
AU - Wang, K. L.
AU - Liu, Y. S.
AU - Burman, C.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 1979
Y1 - 1979
N2 - This paper describes a study comparing the results of the electrical measurements and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. Certain correlations were established among the threshold energy density required for melting, the dopant distributions, and the diode junction depth and leakage. It is demonstrated that in order to obtain low-leakage diodes, the anneaing energy density, which depends upon the implant conditions, far exceeds the melting energy density as determined from the transient optical-reflectivity change.
AB - This paper describes a study comparing the results of the electrical measurements and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. Certain correlations were established among the threshold energy density required for melting, the dopant distributions, and the diode junction depth and leakage. It is demonstrated that in order to obtain low-leakage diodes, the anneaing energy density, which depends upon the implant conditions, far exceeds the melting energy density as determined from the transient optical-reflectivity change.
UR - https://www.scopus.com/pages/publications/36749114680
UR - https://www.scopus.com/pages/publications/36749114680#tab=citedBy
U2 - 10.1063/1.91094
DO - 10.1063/1.91094
M3 - Article
AN - SCOPUS:36749114680
SN - 0003-6951
VL - 35
SP - 263
EP - 265
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 3
ER -