Relationships of the Chemical and Electrical Interfacial Properties of Germanium-SiO2 Systems

Chemical Compounds

• Interface State 49%
• Density of Interface States 39%
• Gas 39%
• Secondary Ion Mass Spectroscopy 23%
• Oxide 23%
• Hydrogen 21%
• Point Group C∞V 16%
• Surface Recombination 16%
• Auger Electron Spectrum 15%
• Dioxygen 15%
• Secondary Ion 13%
• Environment 12%
• Auger Electron Spectroscopy 12%
• Chemical Vapour Deposition 9%
• Velocity 8%
• Annealing 8%
• Time 7%
• Energy 5%
• Reduction 4%
• Oxidation Reaction 4%
• Reaction Yield 4%

Engineering & Materials Science

• Interface states 81%
• Gases 42%
• Hydrogen 33%
• Secondary ion mass spectrometry 32%
• Oxides 27%
• Germanium oxides 21%
• Auger electron spectroscopy 16%
• Charge injection 15%
• Silanes 13%
• Chemical vapor deposition 12%
• Silica 10%
• Annealing 10%
• Ions 9%
• Oxidation 9%
• Defects 7%