Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy

Martin O. Tanner, Michael A. Chu, Kang L. Wang, Marjohn Meshkinpour, Mark S. Goorsky

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.

Original languageEnglish
Pages (from-to)121-125
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1995 Dec 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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