TY - JOUR
T1 - Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy
AU - Tanner, Martin O.
AU - Chu, Michael A.
AU - Wang, Kang L.
AU - Meshkinpour, Marjohn
AU - Goorsky, Mark S.
N1 - Funding Information:
This work was supporteidn partb y the Semicon-ductorR esearcCh orporatio(nS RC) andt heA ir Force Office of ScientificR esearch(A FOSR). The authors wish to thank Dr. S.S. Iyer of Sibond,I nc. and J. Candelariao f Motorola,I nc. for the BESOI wafers usedi n the study.
PY - 1995/12/2
Y1 - 1995/12/2
N2 - The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.
AB - The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.
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U2 - 10.1016/0022-0248(95)00379-7
DO - 10.1016/0022-0248(95)00379-7
M3 - Article
AN - SCOPUS:0029633675
SN - 0022-0248
VL - 157
SP - 121
EP - 125
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -