The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry