Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy

Martin O. Tanner; Michael A. Chu; Kang L. Wang; Marjohn Meshkinpour; Mark S. Goorsky

doi:10.1016/0022-0248(95)00379-7

Relaxed Si_1-xGe_x films with reduced dislocation densities grown by molecular beam epitaxy

Martin O. Tanner
, Michael A. Chu
, Kang L. Wang
, Marjohn Meshkinpour
, Mark S. Goorsky

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The quality of annealed Si_0.86Ge_0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO₂ layer, which allows strain in the Si_0.86Ge_0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.

Original language	English
Pages (from-to)	121-125
Number of pages	5
Journal	Journal of Crystal Growth
Volume	157
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00379-7
Publication status	Published - 1995 Dec 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00379-7

Cite this

@article{bca1d2989dd34ffcb4901f6159d79a9a,

title = "Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy",

abstract = "The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.",

author = "Tanner, \{Martin O.\} and Chu, \{Michael A.\} and Wang, \{Kang L.\} and Marjohn Meshkinpour and Goorsky, \{Mark S.\}",

note = "Funding Information: This work was supporteidn partb y the Semicon-ductorR esearcCh orporatio(nS RC) andt heA ir Force Office of ScientificR esearch(A FOSR). The authors wish to thank Dr. S.S. Iyer of Sibond,I nc. and J. Candelariao f Motorola,I nc. for the BESOI wafers usedi n the study.",

year = "1995",

month = dec,

day = "2",

doi = "10.1016/0022-0248(95)00379-7",

language = "English",

volume = "157",

pages = "121--125",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "1-4",

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TY - JOUR

T1 - Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy

AU - Tanner, Martin O.

AU - Chu, Michael A.

AU - Wang, Kang L.

AU - Meshkinpour, Marjohn

AU - Goorsky, Mark S.

N1 - Funding Information: This work was supporteidn partb y the Semicon-ductorR esearcCh orporatio(nS RC) andt heA ir Force Office of ScientificR esearch(A FOSR). The authors wish to thank Dr. S.S. Iyer of Sibond,I nc. and J. Candelariao f Motorola,I nc. for the BESOI wafers usedi n the study.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.

AB - The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.

UR - https://www.scopus.com/pages/publications/0029633675

UR - https://www.scopus.com/pages/publications/0029633675#tab=citedBy

U2 - 10.1016/0022-0248(95)00379-7

DO - 10.1016/0022-0248(95)00379-7

M3 - Article

AN - SCOPUS:0029633675

SN - 0022-0248

VL - 157

SP - 121

EP - 125

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Relaxed Si_1-xGe_x films with reduced dislocation densities grown by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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