Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress

Ming Wen Ma; Chi Yang Chen; Woei Cheng Wu; Chun Jung Su; Kuo Hsing Kao; Tien Sheng Chao; Tan Fu Lei

doi:10.1109/TED.2008.919710

Reliability mechanisms of LTPS-TFT with HfO₂ gate dielectric: PBTI, NBTI, and hot-carrier stress

Ming Wen Ma, Chi Yang Chen, Woei Cheng Wu, Chun Jung Su, Kuo Hsing Kao, Tien Sheng Chao, Tan Fu Lei

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO₂ gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO₂ gate dielectric is observed for the PBS and PBTI of the HfO₂ LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO₂ LTPS-TFT.

Original language	English
Pages (from-to)	1153-1160
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	5
DOIs	https://doi.org/10.1109/TED.2008.919710
Publication status	Published - 2008 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{147e5b49f0d443c8b235109c6728693a,

title = "Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress",

abstract = "In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT.",

author = "Ma, {Ming Wen} and Chen, {Chi Yang} and Wu, {Woei Cheng} and Su, {Chun Jung} and Kao, {Kuo Hsing} and Chao, {Tien Sheng} and Lei, {Tan Fu}",

year = "2008",

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doi = "10.1109/TED.2008.919710",

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T2 - PBTI, NBTI, and hot-carrier stress

AU - Ma, Ming Wen

AU - Chen, Chi Yang

AU - Wu, Woei Cheng

AU - Su, Chun Jung

AU - Kao, Kuo Hsing

AU - Chao, Tien Sheng

AU - Lei, Tan Fu

PY - 2008/5/1

Y1 - 2008/5/1

N2 - In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT.

AB - In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT.

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