Reliability studies of Hf-doped and NH
                        3
                        -nitrided gate dielectric for advanced CMOS application

C. W. Yang; Y. K. Fang; S. F. Chen; C. S. Lin; Yu-Cheng Lin; W. D. Wang; T. H. Chou; P. J. Lin; M. F. Wang; T. H. Hou; L. G. Yao; S. C. Chen; M. S. Liang

doi:10.1049/ip-cds:20041216

Reliability studies of Hf-doped and NH ₃ -nitrided gate dielectric for advanced CMOS application

C. W. Yang, Y. K. Fang, S. F. Chen, C. S. Lin, Yu-Cheng Lin, W. D. Wang, T. H. Chou, P. J. Lin, M. F. Wang, T. H. Hou, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH ₃ . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO ₂ gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

Original language	English
Pages (from-to)	407-410
Number of pages	4
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	152
Issue number	5
DOIs	https://doi.org/10.1049/ip-cds:20041216
Publication status	Published - 2005 Oct 1
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/ip-cds:20041216

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Yang, C. W., Fang, Y. K., Chen, S. F., Lin, C. S., Lin, Y.-C., Wang, W. D., Chou, T. H., Lin, P. J., Wang, M. F., Hou, T. H., Yao, L. G., Chen, S. C., & Liang, M. S. (2005). Reliability studies of Hf-doped and NH ₃ -nitrided gate dielectric for advanced CMOS application. IEE Proceedings: Circuits, Devices and Systems, 152(5), 407-410. https://doi.org/10.1049/ip-cds:20041216

@article{b62e4aa67cab4b5e9cc94b3f93b85bf8,

title = "Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application",

abstract = " A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.",

author = "Yang, {C. W.} and Fang, {Y. K.} and Chen, {S. F.} and Lin, {C. S.} and Yu-Cheng Lin and Wang, {W. D.} and Chou, {T. H.} and Lin, {P. J.} and Wang, {M. F.} and Hou, {T. H.} and Yao, {L. G.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2005",

month = oct,

day = "1",

doi = "10.1049/ip-cds:20041216",

language = "English",

volume = "152",

pages = "407--410",

journal = "IEE Proceedings: Circuits, Devices and Systems",

issn = "1350-2409",

publisher = "Institution of Engineering and Technology",

number = "5",

}

Yang, CW, Fang, YK, Chen, SF, Lin, CS, Lin, Y-C, Wang, WD, Chou, TH, Lin, PJ, Wang, MF, Hou, TH, Yao, LG, Chen, SC & Liang, MS 2005, 'Reliability studies of Hf-doped and NH ₃ -nitrided gate dielectric for advanced CMOS application', IEE Proceedings: Circuits, Devices and Systems, vol. 152, no. 5, pp. 407-410. https://doi.org/10.1049/ip-cds:20041216

TY - JOUR

T1 - Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application

AU - Yang, C. W.

AU - Fang, Y. K.

AU - Chen, S. F.

AU - Lin, C. S.

AU - Lin, Yu-Cheng

AU - Wang, W. D.

AU - Chou, T. H.

AU - Lin, P. J.

AU - Wang, M. F.

AU - Hou, T. H.

AU - Yao, L. G.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

AB - A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

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UR - http://www.scopus.com/inward/citedby.url?scp=27544514988&partnerID=8YFLogxK

U2 - 10.1049/ip-cds:20041216

DO - 10.1049/ip-cds:20041216

M3 - Article

AN - SCOPUS:27544514988

SN - 1350-2409

VL - 152

SP - 407

EP - 410

JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

IS - 5

ER -

Reliability studies of Hf-doped and NH ₃ -nitrided gate dielectric for advanced CMOS application

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