Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application

C. W. Yang, Y. K. Fang, S. F. Chen, C. S. Lin, Yu-Cheng Lin, W. D. Wang, T. H. Chou, P. J. Lin, M. F. Wang, T. H. Hou, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

Abstract

A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

Original languageEnglish
Pages (from-to)407-410
Number of pages4
JournalIEE Proceedings: Circuits, Devices and Systems
Volume152
Issue number5
DOIs
Publication statusPublished - 2005 Oct 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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