A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering