Reliability studies of mo layer deposited on polyimide substrate for CIGS solar cell applications

Dung-Ching Perng, Ming Chen Hung, Kuo Yu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The thermal stress and mechanical induced reliability issues of the Mo layer deposited on polyimide (PI) flexible substrate are studied. We found that the CIGS film cracks after one-hour 400°C selenization process. And the CIGS crack was initiated from the cracking of the Mo film and it can be improved by a Mo annealing process before the precursor deposition. Lower the ramping rate of the selenization temperature and deposit an additional Mo film on the backside of PI substrate can help to improve substrate curving. However, without the Mo annealing, it provides very little improvement on Mo cracking. The annealing improves the Mo cracking resistance. Adding Ag or Al into Mo film reduces film's resistance and improves "failure diameter" down to curvature of 10 mm in tensile stressing tests.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages891-894
Number of pages4
DOIs
Publication statusPublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 2012 Jun 32012 Jun 8

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period12-06-0312-06-08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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