TY - GEN
T1 - Reliability studies of mo layer deposited on polyimide substrate for CIGS solar cell applications
AU - Perng, Dung Ching
AU - Hung, Ming Chen
AU - Wang, Kuo Yu
PY - 2012
Y1 - 2012
N2 - The thermal stress and mechanical induced reliability issues of the Mo layer deposited on polyimide (PI) flexible substrate are studied. We found that the CIGS film cracks after one-hour 400°C selenization process. And the CIGS crack was initiated from the cracking of the Mo film and it can be improved by a Mo annealing process before the precursor deposition. Lower the ramping rate of the selenization temperature and deposit an additional Mo film on the backside of PI substrate can help to improve substrate curving. However, without the Mo annealing, it provides very little improvement on Mo cracking. The annealing improves the Mo cracking resistance. Adding Ag or Al into Mo film reduces film's resistance and improves "failure diameter" down to curvature of 10 mm in tensile stressing tests.
AB - The thermal stress and mechanical induced reliability issues of the Mo layer deposited on polyimide (PI) flexible substrate are studied. We found that the CIGS film cracks after one-hour 400°C selenization process. And the CIGS crack was initiated from the cracking of the Mo film and it can be improved by a Mo annealing process before the precursor deposition. Lower the ramping rate of the selenization temperature and deposit an additional Mo film on the backside of PI substrate can help to improve substrate curving. However, without the Mo annealing, it provides very little improvement on Mo cracking. The annealing improves the Mo cracking resistance. Adding Ag or Al into Mo film reduces film's resistance and improves "failure diameter" down to curvature of 10 mm in tensile stressing tests.
UR - http://www.scopus.com/inward/record.url?scp=84869457310&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869457310&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2012.6317745
DO - 10.1109/PVSC.2012.6317745
M3 - Conference contribution
AN - SCOPUS:84869457310
SN - 9781467300643
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 891
EP - 894
BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Y2 - 3 June 2012 through 8 June 2012
ER -