Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding

Jr Wei Peng, Yan Siang Chen, Yi Chen, Jiang Long Liang, Kwang-Lung Lin, Yuh-Lang Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Organic soderability preservative (OSP) is the cheapest metal surface finish to apply for corrosion inhibition of bare copper. In conventional flip chip process, the various OSPs could be dissolved by rosin pre-fluxes before the chip placement to enable solder bonding. The thermal compression flip chip bonding with non-conductive paste (TCNCP) process is one type of no-flow underfill process. In a TCNCP process, the OSP layer must dissolve in self-fluxing agent in NCP, but the process does not have adequate time for allowing complete dissolution to occur. In order to assist in OSP removal, this work attempted to Ar/O2 microwave plasma to remove the OSP layer on Cu trace of a substrate. The SEM-FIB investigation revealed that almost all of OSP layer could be removed with plasma, while only few OSPs remained in the relatively deep concavity on the surface of Cu trace. The analysis results by SEM-EDX showed that the carbon content of the treated plasma residue decreased from 44.69% to 11.5%. The Raman spectrum also showed that the bands of vibration mode in benzimidaozle almost disappeared, indicating the successful removal of the OSP layer by Ar/O2 microwave plasma. The cross-sectional SEM image of the bump on trace produced with the TCNCP process indicated that thin intermetallic compound (IMC) layer formed at the solder/Cu trace interface when incorporated with Ar/O2 microwave plasma pre-treatment. The SEM-DEX composition analysis delineated that the IMC layer consists of Cu3Sn and Cu6Sn5. These results indicate the successful removal of OSP.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1584-1589
Number of pages6
ISBN (Electronic)9781479924073
DOIs
Publication statusPublished - 2014 Sep 11
Event64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States
Duration: 2014 May 272014 May 30

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other64th Electronic Components and Technology Conference, ECTC 2014
CountryUnited States
CityOrlando
Period14-05-2714-05-30

Fingerprint

Soldering alloys
Compaction
Microwaves
Plasmas
Scanning electron microscopy
Intermetallics
Adhesive pastes
Ointments
Raman scattering
Copper
Energy dispersive spectroscopy
Dissolution
Carbon
Metals
Hot Temperature
Corrosion
Fluxes
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Peng, J. W., Chen, Y. S., Chen, Y., Liang, J. L., Lin, K-L., & Lee, Y-L. (2014). Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding. In Proceedings - Electronic Components and Technology Conference (pp. 1584-1589). [689750] (Proceedings - Electronic Components and Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2014.689750
Peng, Jr Wei ; Chen, Yan Siang ; Chen, Yi ; Liang, Jiang Long ; Lin, Kwang-Lung ; Lee, Yuh-Lang. / Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding. Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1584-1589 (Proceedings - Electronic Components and Technology Conference).
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title = "Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding",
abstract = "Organic soderability preservative (OSP) is the cheapest metal surface finish to apply for corrosion inhibition of bare copper. In conventional flip chip process, the various OSPs could be dissolved by rosin pre-fluxes before the chip placement to enable solder bonding. The thermal compression flip chip bonding with non-conductive paste (TCNCP) process is one type of no-flow underfill process. In a TCNCP process, the OSP layer must dissolve in self-fluxing agent in NCP, but the process does not have adequate time for allowing complete dissolution to occur. In order to assist in OSP removal, this work attempted to Ar/O2 microwave plasma to remove the OSP layer on Cu trace of a substrate. The SEM-FIB investigation revealed that almost all of OSP layer could be removed with plasma, while only few OSPs remained in the relatively deep concavity on the surface of Cu trace. The analysis results by SEM-EDX showed that the carbon content of the treated plasma residue decreased from 44.69{\%} to 11.5{\%}. The Raman spectrum also showed that the bands of vibration mode in benzimidaozle almost disappeared, indicating the successful removal of the OSP layer by Ar/O2 microwave plasma. The cross-sectional SEM image of the bump on trace produced with the TCNCP process indicated that thin intermetallic compound (IMC) layer formed at the solder/Cu trace interface when incorporated with Ar/O2 microwave plasma pre-treatment. The SEM-DEX composition analysis delineated that the IMC layer consists of Cu3Sn and Cu6Sn5. These results indicate the successful removal of OSP.",
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Peng, JW, Chen, YS, Chen, Y, Liang, JL, Lin, K-L & Lee, Y-L 2014, Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding. in Proceedings - Electronic Components and Technology Conference., 689750, Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1584-1589, 64th Electronic Components and Technology Conference, ECTC 2014, Orlando, United States, 14-05-27. https://doi.org/10.1109/ECTC.2014.689750

Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding. / Peng, Jr Wei; Chen, Yan Siang; Chen, Yi; Liang, Jiang Long; Lin, Kwang-Lung; Lee, Yuh-Lang.

Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1584-1589 689750 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chen, Yi

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AU - Lin, Kwang-Lung

AU - Lee, Yuh-Lang

PY - 2014/9/11

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N2 - Organic soderability preservative (OSP) is the cheapest metal surface finish to apply for corrosion inhibition of bare copper. In conventional flip chip process, the various OSPs could be dissolved by rosin pre-fluxes before the chip placement to enable solder bonding. The thermal compression flip chip bonding with non-conductive paste (TCNCP) process is one type of no-flow underfill process. In a TCNCP process, the OSP layer must dissolve in self-fluxing agent in NCP, but the process does not have adequate time for allowing complete dissolution to occur. In order to assist in OSP removal, this work attempted to Ar/O2 microwave plasma to remove the OSP layer on Cu trace of a substrate. The SEM-FIB investigation revealed that almost all of OSP layer could be removed with plasma, while only few OSPs remained in the relatively deep concavity on the surface of Cu trace. The analysis results by SEM-EDX showed that the carbon content of the treated plasma residue decreased from 44.69% to 11.5%. The Raman spectrum also showed that the bands of vibration mode in benzimidaozle almost disappeared, indicating the successful removal of the OSP layer by Ar/O2 microwave plasma. The cross-sectional SEM image of the bump on trace produced with the TCNCP process indicated that thin intermetallic compound (IMC) layer formed at the solder/Cu trace interface when incorporated with Ar/O2 microwave plasma pre-treatment. The SEM-DEX composition analysis delineated that the IMC layer consists of Cu3Sn and Cu6Sn5. These results indicate the successful removal of OSP.

AB - Organic soderability preservative (OSP) is the cheapest metal surface finish to apply for corrosion inhibition of bare copper. In conventional flip chip process, the various OSPs could be dissolved by rosin pre-fluxes before the chip placement to enable solder bonding. The thermal compression flip chip bonding with non-conductive paste (TCNCP) process is one type of no-flow underfill process. In a TCNCP process, the OSP layer must dissolve in self-fluxing agent in NCP, but the process does not have adequate time for allowing complete dissolution to occur. In order to assist in OSP removal, this work attempted to Ar/O2 microwave plasma to remove the OSP layer on Cu trace of a substrate. The SEM-FIB investigation revealed that almost all of OSP layer could be removed with plasma, while only few OSPs remained in the relatively deep concavity on the surface of Cu trace. The analysis results by SEM-EDX showed that the carbon content of the treated plasma residue decreased from 44.69% to 11.5%. The Raman spectrum also showed that the bands of vibration mode in benzimidaozle almost disappeared, indicating the successful removal of the OSP layer by Ar/O2 microwave plasma. The cross-sectional SEM image of the bump on trace produced with the TCNCP process indicated that thin intermetallic compound (IMC) layer formed at the solder/Cu trace interface when incorporated with Ar/O2 microwave plasma pre-treatment. The SEM-DEX composition analysis delineated that the IMC layer consists of Cu3Sn and Cu6Sn5. These results indicate the successful removal of OSP.

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Peng JW, Chen YS, Chen Y, Liang JL, Lin K-L, Lee Y-L. Removed organic solderability preservative (OSPs) by Ar/O2 microwave plasma to improve solder joint in thermal compression flip chip bonding. In Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1584-1589. 689750. (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2014.689750