Flexible gelatin resistive memory device exhibits a high ON/OFF ratio of over 106. Moreover, the bended gelatin resistive memory device can efficiently heal at room temperature without any external stimulus. This self-healing behavior of gelatin resistive memory device was demonstrated based on the metal chelating ligand. Al ions migrating from the top radio frequency Al electrode contributed to the construction of the metal chelating ligand. The carboxylates of gelatin can form multi-dentate coordination compounds with Al ions, which can restore the memory properties of the gelatin resistive memory device. Thus, Al ion migration from the top Al electrodes plays an important role in self-healing capability. The effect of Al ions on the self-healing mechanism was investigated by using secondary ion mass spectrometry, which is useful for the characterization of Al migration from the top electrode. This capability for restoring the electrical properties of gelatin memory device is desirable for flexible electronics and represents a major step toward self-healable bioelectronics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering