Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

Richard G. Hobbs, Michael Schmidt, Ciara T. Bolger, Yordan M. Georgiev, Peter Fleming, Michael A. Morris, Nikolay Petkov, Justin D. Holmes, Faxian Xiu, Kang L. Wang, Vladimir Djara, Ran Yu, Jean Pierre Colinge

Research output: Contribution to journalArticlepeer-review

Abstract

The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi 2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi 2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.

Original languageEnglish
Article number041602
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number4
DOIs
Publication statusPublished - 2012 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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