Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

Richard G. Hobbs; Michael Schmidt; Ciara T. Bolger; Yordan M. Georgiev; Peter Fleming; Michael A. Morris; Nikolay Petkov; Justin D. Holmes; Faxian Xiu; Kang L. Wang; Vladimir Djara; Ran Yu; Jean Pierre Colinge

doi:10.1116/1.4724302

Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi₂Se₃ nanowires by electron beam lithography

Richard G. Hobbs, Michael Schmidt, Ciara T. Bolger, Yordan M. Georgiev, Peter Fleming, Michael A. Morris, Nikolay Petkov, Justin D. Holmes, Faxian Xiu, Kang L. Wang, Vladimir Djara, Ran Yu, Jean Pierre Colinge

College of Electrical Engineering and Computer Science

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14 Citations (Scopus)

Abstract

The authors report a chemical process to remove the native oxide on Ge and Bi₂Se₃ crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi ₂Se₃, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi ₂Se₃ nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.

Original language	English
Article number	041602
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4724302
Publication status	Published - 2012 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4724302

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Hobbs, R. G., Schmidt, M., Bolger, C. T., Georgiev, Y. M., Fleming, P., Morris, M. A., Petkov, N., Holmes, J. D., Xiu, F., Wang, K. L., Djara, V., Yu, R., & Colinge, J. P. (2012). Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi₂Se₃ nanowires by electron beam lithography. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 30(4), Article 041602. https://doi.org/10.1116/1.4724302

@article{362b8e6ee34245fda0bb2c50ec6b1e1c,

title = "Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography",

abstract = "The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi 2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi 2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.",

author = "Hobbs, {Richard G.} and Michael Schmidt and Bolger, {Ciara T.} and Georgiev, {Yordan M.} and Peter Fleming and Morris, {Michael A.} and Nikolay Petkov and Holmes, {Justin D.} and Faxian Xiu and Wang, {Kang L.} and Vladimir Djara and Ran Yu and Colinge, {Jean Pierre}",

note = "Funding Information: The authors acknowledge financial support from the Irish Research Council for Science, Engineering and Technology (IRCSET) and Science Foundation Ireland (Grant Nos. 08/CE/I1432, 09/IN.1/I2602, and 09/SIRG/I1621). This research was also enabled by the Higher Education Authority Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program. The authors acknowledge Gillian Collins for assistance with ATR-FTIR measurements and Stephen Connaughton for initial Ar ion etch tests on BiSe films. + 2 3",

year = "2012",

month = jul,

doi = "10.1116/1.4724302",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

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Hobbs, RG, Schmidt, M, Bolger, CT, Georgiev, YM, Fleming, P, Morris, MA, Petkov, N, Holmes, JD, Xiu, F, Wang, KL, Djara, V, Yu, R & Colinge, JP 2012, 'Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi₂Se₃ nanowires by electron beam lithography', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 30, no. 4, 041602. https://doi.org/10.1116/1.4724302

Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi₂Se₃ nanowires by electron beam lithography. / Hobbs, Richard G.; Schmidt, Michael; Bolger, Ciara T. et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 4, 041602, 07.2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

AU - Hobbs, Richard G.

AU - Schmidt, Michael

AU - Bolger, Ciara T.

AU - Georgiev, Yordan M.

AU - Fleming, Peter

AU - Morris, Michael A.

AU - Petkov, Nikolay

AU - Holmes, Justin D.

AU - Xiu, Faxian

AU - Wang, Kang L.

AU - Djara, Vladimir

AU - Yu, Ran

AU - Colinge, Jean Pierre

N1 - Funding Information: The authors acknowledge financial support from the Irish Research Council for Science, Engineering and Technology (IRCSET) and Science Foundation Ireland (Grant Nos. 08/CE/I1432, 09/IN.1/I2602, and 09/SIRG/I1621). This research was also enabled by the Higher Education Authority Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program. The authors acknowledge Gillian Collins for assistance with ATR-FTIR measurements and Stephen Connaughton for initial Ar ion etch tests on BiSe films. + 2 3

PY - 2012/7

Y1 - 2012/7

N2 - The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi 2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi 2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.

AB - The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi 2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi 2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.

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DO - 10.1116/1.4724302

M3 - Article

AN - SCOPUS:84864225678

SN - 2166-2746

VL - 30

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 4

M1 - 041602

ER -

Resist-substrate interface tailoring for generating high-density arrays of Ge and Bi₂Se₃ nanowires by electron beam lithography

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