Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

Chian Yuh Sin; Bing Hung Chen; W. L. Loh; J. Yu; P. Yelehanka; A. See; L. Chan

doi:10.1116/1.1503791

Resist trimming in high-density CF₄/O₂ plasmas for sub-0.1 μm device fabrication

Chian Yuh Sin, Bing Hung Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, L. Chan

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.

Original language	English
Pages (from-to)	1974-1981
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1503791
Publication status	Published - 2002 Sep

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1503791

Cite this

@article{3abc6160ada84918a7bb390be45da4e0,

title = "Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication",

abstract = "Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.",

author = "Sin, {Chian Yuh} and Chen, {Bing Hung} and Loh, {W. L.} and J. Yu and P. Yelehanka and A. See and L. Chan",

year = "2002",

month = sep,

doi = "10.1116/1.1503791",

language = "English",

volume = "20",

pages = "1974--1981",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "5",

}

TY - JOUR

T1 - Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

AU - Sin, Chian Yuh

AU - Chen, Bing Hung

AU - Loh, W. L.

AU - Yu, J.

AU - Yelehanka, P.

AU - See, A.

AU - Chan, L.

PY - 2002/9

Y1 - 2002/9

N2 - Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.

AB - Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.

UR - http://www.scopus.com/inward/record.url?scp=0036026365&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036026365&partnerID=8YFLogxK

U2 - 10.1116/1.1503791

DO - 10.1116/1.1503791

M3 - Article

AN - SCOPUS:0036026365

VL - 20

SP - 1974

EP - 1981

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 5

ER -

Resist trimming in high-density CF₄/O₂ plasmas for sub-0.1 μm device fabrication

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this