Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

Chian Yuh Sin, Bing Hung Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, L. Chan

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.

Original languageEnglish
Pages (from-to)1974-1981
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
Publication statusPublished - 2002 Sep 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Resist trimming in high-density CF<sub>4</sub>/O<sub>2</sub> plasmas for sub-0.1 μm device fabrication'. Together they form a unique fingerprint.

  • Cite this