Abstract
Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.
Original language | English |
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Pages (from-to) | 1974-1981 |
Number of pages | 8 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2002 Sep |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering