Abstract
Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.
| Original language | English |
|---|---|
| Pages (from-to) | 1974-1981 |
| Number of pages | 8 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2002 Sep 1 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Sin, C. Y., Chen, B. H., Loh, W. L., Yu, J., Yelehanka, P., See, A., & Chan, L. (2002). Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(5), 1974-1981. https://doi.org/10.1116/1.1503791