Resist trimming technique in CF₄/O₂ high-density plasmas for sub-0.1 μm MOSFET fabrication using 248-nm lithography

Engineering & Materials Science

• Plasma density 100%
• Trimming 76%
• Lithography 67%
• Polysilicon 53%
• Bias voltage 38%
• Transistors 26%
• Inspection 23%
• MOS devices 21%
• Photoresists 19%
• Linewidth 19%
• Etching 16%
• Electric current control 16%
• Flow of gases 14%
• Design of experiments 14%

Physics & Astronomy

• plasma density 59%
• lithography 51%
• field effect transistors 48%
• fabrication 37%
• nonuniformity 15%
• inspection 14%
• transistors 12%
• experiment design 9%
• electric potential 8%
• photoresists 8%
• gas flow 7%
• reactors 5%
• etching 5%
• saturation 5%

Chemical Compounds

• Dimension 46%
• Plasma 38%
• Voltage 29%
• Length 24%
• Etching 18%
• Pressure 11%