Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model

Yung Chiang Lan; Ping Sang Huang; Ming Chieh Lin

doi:10.1109/IVNC.2007.4481023

Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model

Yung Chiang Lan, Ping Sang Huang, Ming Chieh Lin

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Original language	English
Title of host publication	Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07
Pages	263-264
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2007.4481023
Publication status	Published - 2007
Event	Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07 - Chicago, IL, United States Duration: 2008 Jul 8 → 2008 Jul 12

Publication series

Name	Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07

Other

Other	Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07
Country/Territory	United States
City	Chicago, IL
Period	08-07-08 → 08-07-12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/IVNC.2007.4481023

Cite this

Lan, Y. C., Huang, P. S., & Lin, M. C. (2007). Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model. In Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07 (pp. 263-264). Article 4481023 (Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07). https://doi.org/10.1109/IVNC.2007.4481023

Lan, Yung Chiang ; Huang, Ping Sang ; Lin, Ming Chieh. / Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate : A simulation study using classical transport model. Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07. 2007. pp. 263-264 (Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07).

@inproceedings{61de58f69fc64c7db426639b3957b42b,

title = "Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model",

author = "Lan, {Yung Chiang} and Huang, {Ping Sang} and Lin, {Ming Chieh}",

year = "2007",

doi = "10.1109/IVNC.2007.4481023",

language = "English",

isbn = "1424411343",

series = "Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07",

pages = "263--264",

booktitle = "Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07",

note = "Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07 ; Conference date: 08-07-2008 Through 12-07-2008",

}

Lan, YC, Huang, PS & Lin, MC 2007, Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model. in Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07., 4481023, Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, pp. 263-264, Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, Chicago, IL, United States, 08-07-08. https://doi.org/10.1109/IVNC.2007.4481023

Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model. / Lan, Yung Chiang; Huang, Ping Sang; Lin, Ming Chieh.
Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07. 2007. p. 263-264 4481023 (Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate

T2 - Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07

AU - Lan, Yung Chiang

AU - Huang, Ping Sang

AU - Lin, Ming Chieh

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DO - 10.1109/IVNC.2007.4481023

M3 - Conference contribution

AN - SCOPUS:50249172137

SN - 1424411343

SN - 9781424411344

T3 - Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07

SP - 263

EP - 264

BT - Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07

Y2 - 8 July 2008 through 12 July 2008

ER -

Lan YC, Huang PS, Lin MC. Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model. In Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07. 2007. p. 263-264. 4481023. (Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07). doi: 10.1109/IVNC.2007.4481023

Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model

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