Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)