Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

C. W. Chong, M. J. Huang, H. C. Han, Y. K. Lin, J. M. Chiu, Y. F. Huang, H. J. Lin, T. W. Pi, J. G. Lin, L. C. Chen, K. H. Chen, Y. F. Chen

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5 Citations (Scopus)


Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.

Original languageEnglish
Article number211606
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2013 Nov 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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