Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires

Chia Hao Tu; Che Chia Chang; Chao Hung Wang; Hisn Chiao Fang; Michael R.S. Huang; Yi Chang Li; Hung Jen Chang; Cheng Hsueh Lu; Yen Chih Chen; Ruey Chi Wang; Yonhua Tzeng; Chuan Pu Liu

doi:10.1016/j.jallcom.2014.05.145

Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires

Chia Hao Tu, Che Chia Chang, Chao Hung Wang, Hisn Chiao Fang, Michael R.S. Huang, Yi Chang Li, Hung Jen Chang, Cheng Hsueh Lu, Yen Chih Chen, Ruey Chi Wang, Yonhua Tzeng, Chuan Pu Liu

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

Original language	English
Pages (from-to)	754-760
Number of pages	7
Journal	Journal of Alloys and Compounds
Volume	615
DOIs	https://doi.org/10.1016/j.jallcom.2014.05.145
Publication status	Published - 2014 Dec 5

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2014.05.145

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@article{7b4d563162c44905945b393d215cac90,

title = "Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires",

abstract = "We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.",

author = "Tu, {Chia Hao} and Chang, {Che Chia} and Wang, {Chao Hung} and Fang, {Hisn Chiao} and Huang, {Michael R.S.} and Li, {Yi Chang} and Chang, {Hung Jen} and Lu, {Cheng Hsueh} and Chen, {Yen Chih} and Wang, {Ruey Chi} and Yonhua Tzeng and Liu, {Chuan Pu}",

note = "Funding Information: The authors would like to thank Y. Liu, M. Pan, J. Wen, and D. Miller, scientists in Argonne National Lab, for useful opinions and technical support, and the National Science Council (NSC) Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pintung Area for access to SEM equipment. Some experiments were performed at the Electron Microscopy Center and the Center for Nanoscale Materials at Argonne National Laboratory, a U.S. Department of Energy Office of Science Laboratory operated under contract No. DE-AC02-06CH11357 by U Chicago Argonne, LLC. This work was financially supported by the National Science Council of Taiwan (under Grants NSC 101-2221-E-006-131-MY3, NSC 102-2923-E-006-003-MY3, and NSC 101-2911-I-006-517 ) and the Headquarters of University Advancement at National Cheng Kung University , which is sponsored by the Ministry of Education, Taiwan, ROC .",

year = "2014",

month = dec,

day = "5",

doi = "10.1016/j.jallcom.2014.05.145",

language = "English",

volume = "615",

pages = "754--760",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires

AU - Tu, Chia Hao

AU - Chang, Che Chia

AU - Wang, Chao Hung

AU - Fang, Hisn Chiao

AU - Huang, Michael R.S.

AU - Li, Yi Chang

AU - Chang, Hung Jen

AU - Lu, Cheng Hsueh

AU - Chen, Yen Chih

AU - Wang, Ruey Chi

AU - Tzeng, Yonhua

AU - Liu, Chuan Pu

N1 - Funding Information: The authors would like to thank Y. Liu, M. Pan, J. Wen, and D. Miller, scientists in Argonne National Lab, for useful opinions and technical support, and the National Science Council (NSC) Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pintung Area for access to SEM equipment. Some experiments were performed at the Electron Microscopy Center and the Center for Nanoscale Materials at Argonne National Laboratory, a U.S. Department of Energy Office of Science Laboratory operated under contract No. DE-AC02-06CH11357 by U Chicago Argonne, LLC. This work was financially supported by the National Science Council of Taiwan (under Grants NSC 101-2221-E-006-131-MY3, NSC 102-2923-E-006-003-MY3, and NSC 101-2911-I-006-517 ) and the Headquarters of University Advancement at National Cheng Kung University , which is sponsored by the Ministry of Education, Taiwan, ROC .

PY - 2014/12/5

Y1 - 2014/12/5

N2 - We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

AB - We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

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U2 - 10.1016/j.jallcom.2014.05.145

DO - 10.1016/j.jallcom.2014.05.145

M3 - Article

AN - SCOPUS:84905044462

SN - 0925-8388

VL - 615

SP - 754

EP - 760

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires

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