Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires

Chia Hao Tu, Che Chia Chang, Chao Hung Wang, Hisn Chiao Fang, Michael R.S. Huang, Yi Chang Li, Hung Jen Chang, Cheng Hsueh Lu, Yen Chih Chen, Ruey Chi Wang, Yon-Hua Tzeng, Chuan-Pu Liu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

Original languageEnglish
Pages (from-to)754-760
Number of pages7
JournalJournal of Alloys and Compounds
Volume615
DOIs
Publication statusPublished - 2014 Dec 5

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Nanowires
Durability
Data storage equipment
Crystals
Grain boundaries
Copper
Single crystals
Defect density
Threshold voltage
Deterioration
Ions
Transmission electron microscopy
Microstructure
Electrodes
Electric potential
Air

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Tu, Chia Hao ; Chang, Che Chia ; Wang, Chao Hung ; Fang, Hisn Chiao ; Huang, Michael R.S. ; Li, Yi Chang ; Chang, Hung Jen ; Lu, Cheng Hsueh ; Chen, Yen Chih ; Wang, Ruey Chi ; Tzeng, Yon-Hua ; Liu, Chuan-Pu. / Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires. In: Journal of Alloys and Compounds. 2014 ; Vol. 615. pp. 754-760.
@article{7b4d563162c44905945b393d215cac90,
title = "Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires",
abstract = "We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.",
author = "Tu, {Chia Hao} and Chang, {Che Chia} and Wang, {Chao Hung} and Fang, {Hisn Chiao} and Huang, {Michael R.S.} and Li, {Yi Chang} and Chang, {Hung Jen} and Lu, {Cheng Hsueh} and Chen, {Yen Chih} and Wang, {Ruey Chi} and Yon-Hua Tzeng and Chuan-Pu Liu",
year = "2014",
month = "12",
day = "5",
doi = "10.1016/j.jallcom.2014.05.145",
language = "English",
volume = "615",
pages = "754--760",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires. / Tu, Chia Hao; Chang, Che Chia; Wang, Chao Hung; Fang, Hisn Chiao; Huang, Michael R.S.; Li, Yi Chang; Chang, Hung Jen; Lu, Cheng Hsueh; Chen, Yen Chih; Wang, Ruey Chi; Tzeng, Yon-Hua; Liu, Chuan-Pu.

In: Journal of Alloys and Compounds, Vol. 615, 05.12.2014, p. 754-760.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Resistive memory devices with high switching endurance through single filaments in Bi-crystal CuO nanowires

AU - Tu, Chia Hao

AU - Chang, Che Chia

AU - Wang, Chao Hung

AU - Fang, Hisn Chiao

AU - Huang, Michael R.S.

AU - Li, Yi Chang

AU - Chang, Hung Jen

AU - Lu, Cheng Hsueh

AU - Chen, Yen Chih

AU - Wang, Ruey Chi

AU - Tzeng, Yon-Hua

AU - Liu, Chuan-Pu

PY - 2014/12/5

Y1 - 2014/12/5

N2 - We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

AB - We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm's law, with a high resistance, within the sweeping voltage range of 0-4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments.

UR - http://www.scopus.com/inward/record.url?scp=84905044462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905044462&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2014.05.145

DO - 10.1016/j.jallcom.2014.05.145

M3 - Article

VL - 615

SP - 754

EP - 760

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -