TY - GEN
T1 - Resistive random access memories with nanodiamond dielectric films
AU - Lu, Chichun
AU - Chu, Yuehchieh
AU - Tzeng, Yon-Hua
PY - 2013/12/1
Y1 - 2013/12/1
N2 - We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.
AB - We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.
UR - http://www.scopus.com/inward/record.url?scp=84894181230&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2013.6720929
DO - 10.1109/NANO.2013.6720929
M3 - Conference contribution
AN - SCOPUS:84894181230
SN - 9781479906758
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 225
EP - 228
BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Y2 - 5 August 2013 through 8 August 2013
ER -