Resistive random access memories with nanodiamond dielectric films

Chichun Lu, Yuehchieh Chu, Yon-Hua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages225-228
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 2013 Aug 52013 Aug 8

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period13-08-0513-08-08

Fingerprint

Nanodiamonds
Dielectric films
random access memory
Data storage equipment
electrodes
counters
copper
electrical resistivity
Electrodes
low resistance
high resistance
Copper
low voltage
tungsten
solubility
Tungsten
cooling
microwaves
conduction
fabrication

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Lu, C., Chu, Y., & Tzeng, Y-H. (2013). Resistive random access memories with nanodiamond dielectric films. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 225-228). [6720929] https://doi.org/10.1109/NANO.2013.6720929
Lu, Chichun ; Chu, Yuehchieh ; Tzeng, Yon-Hua. / Resistive random access memories with nanodiamond dielectric films. 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. pp. 225-228
@inproceedings{d969535e611a4662aadf5940f9be4e94,
title = "Resistive random access memories with nanodiamond dielectric films",
abstract = "We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.",
author = "Chichun Lu and Yuehchieh Chu and Yon-Hua Tzeng",
year = "2013",
doi = "10.1109/NANO.2013.6720929",
language = "English",
isbn = "9781479906758",
pages = "225--228",
booktitle = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013",

}

Lu, C, Chu, Y & Tzeng, Y-H 2013, Resistive random access memories with nanodiamond dielectric films. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720929, pp. 225-228, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 13-08-05. https://doi.org/10.1109/NANO.2013.6720929

Resistive random access memories with nanodiamond dielectric films. / Lu, Chichun; Chu, Yuehchieh; Tzeng, Yon-Hua.

2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 225-228 6720929.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Resistive random access memories with nanodiamond dielectric films

AU - Lu, Chichun

AU - Chu, Yuehchieh

AU - Tzeng, Yon-Hua

PY - 2013

Y1 - 2013

N2 - We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.

AB - We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.

UR - http://www.scopus.com/inward/record.url?scp=84894181230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894181230&partnerID=8YFLogxK

U2 - 10.1109/NANO.2013.6720929

DO - 10.1109/NANO.2013.6720929

M3 - Conference contribution

SN - 9781479906758

SP - 225

EP - 228

BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

ER -

Lu C, Chu Y, Tzeng Y-H. Resistive random access memories with nanodiamond dielectric films. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 225-228. 6720929 https://doi.org/10.1109/NANO.2013.6720929