Resistive random access memories with nanodiamond dielectric films

Chichun Lu, Yuehchieh Chu, Yonhua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages225-228
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 2013 Aug 52013 Aug 8

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/TerritoryChina
CityBeijing
Period13-08-0513-08-08

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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