Resistive switching behavior in gelatin thin films for nonvolatile memory application

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Abstract

This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 106 and a long retention time of over 105 seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.

Original languageEnglish
Pages (from-to)5413-5421
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number8
DOIs
Publication statusPublished - 2014 Apr 23

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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