Resistive switching behavior of magnesium zirconia nickel nanorods

Tzu Han Su, Ke Jing Lee, Li Wen Wang, Yu Chi Chang, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Original languageEnglish
Article number2755
Pages (from-to)1-11
Number of pages11
Issue number12
Publication statusPublished - 2020 Jun 2

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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