Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device

Yuan Wen Hsiao; Shi Yu Wang; Cheng Liang Huang; Ching Chich Leu; Chuan Feng Shih

doi:10.3390/nano10061155

Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device

Yuan Wen Hsiao, Shi Yu Wang, Cheng Liang Huang, Ching Chich Leu, Chuan Feng Shih

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA_0.75MA_0.25)_1-xCs_xPbI₃ (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA_0.75MA_0.25PbI₃. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA_0.75MA_0.25PbI₃, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA_0.75MA_0.25)_0.95Cs_0.05PbI₃ device is greater than 10³ owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA_0.75MA_0.25PbI₃ films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.

Original language	English
Article number	1155
Journal	Nanomaterials
Volume	10
Issue number	6
DOIs	https://doi.org/10.3390/nano10061155
Publication status	Published - 2020 Jun

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)

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@article{6b9a09a069434ec4ba4d0586267881e7,

title = "Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device",

abstract = "In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA0.75MA0.25)0.95Cs0.05PbI3 device is greater than 103 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA0.75MA0.25PbI3 films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.",

author = "Hsiao, {Yuan Wen} and Wang, {Shi Yu} and Huang, {Cheng Liang} and Leu, {Ching Chich} and Shih, {Chuan Feng}",

note = "Funding Information: Acknowledgments: The authors are grateful for the support of the Ministry of Science and Technology of the Republic of China under contract MOST 107-2221-E-006-019, MOST 108-2221-E-006-041 and MOST 108-2221-E-390-009, Taiwan. Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2020",

month = jun,

doi = "10.3390/nano10061155",

language = "English",

volume = "10",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "6",

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T1 - Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device

AU - Hsiao, Yuan Wen

AU - Wang, Shi Yu

AU - Huang, Cheng Liang

AU - Leu, Ching Chich

AU - Shih, Chuan Feng

N1 - Funding Information: Acknowledgments: The authors are grateful for the support of the Ministry of Science and Technology of the Republic of China under contract MOST 107-2221-E-006-019, MOST 108-2221-E-006-041 and MOST 108-2221-E-390-009, Taiwan. Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2020/6

Y1 - 2020/6

N2 - In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA0.75MA0.25)0.95Cs0.05PbI3 device is greater than 103 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA0.75MA0.25PbI3 films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.

AB - In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA0.75MA0.25)0.95Cs0.05PbI3 device is greater than 103 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA0.75MA0.25PbI3 films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.

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DO - 10.3390/nano10061155

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JF - Nanomaterials

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Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device

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