Resolving Issues of VTHand ILeakfor P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays

Chih Lung Lin; Yi Chien Chen; Po Cheng Lai; Jui Hung Chang; Ting En Wei; Cheng Yi Huang

doi:10.1109/LED.2023.3346393

Resolving Issues of V_THand I_Leakfor P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays

Chih Lung Lin, Yi Chien Chen, Po Cheng Lai, Jui Hung Chang, Ting En Wei, Cheng Yi Huang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This work proposes an emission (EM) gate driver that is based on p-type low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and VTH variation in LTPS TFTs is improved by enhancing the driving capability of the pull-down TFT. The pulse width of the EM signal is adjustable, and the gate driver has a stabilizing structure to reduce the voltage deviation caused by the high leakage current (ILeak) of LTPS TFTs; it keeps the EM signal at its lowest voltage level for 96.7% of the duration of a frame. Measurements indicate that the proposed structure shortens the falling time of the EM signal to 3.815 μ s, which is much shorter than a horizontal time of 46 μ s, yielding an EM signal with low distortion.

Original language	English
Pages (from-to)	400-403
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	3
DOIs	https://doi.org/10.1109/LED.2023.3346393
Publication status	Published - 2024 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2023.3346393

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@article{2511d58ed550439b886ae968fb205339,

title = "Resolving Issues of VTHand ILeakfor P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays",

abstract = "This work proposes an emission (EM) gate driver that is based on p-type low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and VTH variation in LTPS TFTs is improved by enhancing the driving capability of the pull-down TFT. The pulse width of the EM signal is adjustable, and the gate driver has a stabilizing structure to reduce the voltage deviation caused by the high leakage current (ILeak) of LTPS TFTs; it keeps the EM signal at its lowest voltage level for 96.7% of the duration of a frame. Measurements indicate that the proposed structure shortens the falling time of the EM signal to 3.815 μ s, which is much shorter than a horizontal time of 46 μ s, yielding an EM signal with low distortion.",

author = "Lin, {Chih Lung} and Chen, {Yi Chien} and Lai, {Po Cheng} and Chang, {Jui Hung} and Wei, {Ting En} and Huang, {Cheng Yi}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

month = mar,

day = "1",

doi = "10.1109/LED.2023.3346393",

language = "English",

volume = "45",

pages = "400--403",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Resolving Issues of VTHand ILeakfor P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays

AU - Lin, Chih Lung

AU - Chen, Yi Chien

AU - Lai, Po Cheng

AU - Chang, Jui Hung

AU - Wei, Ting En

AU - Huang, Cheng Yi

PY - 2024/3/1

Y1 - 2024/3/1

N2 - This work proposes an emission (EM) gate driver that is based on p-type low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and VTH variation in LTPS TFTs is improved by enhancing the driving capability of the pull-down TFT. The pulse width of the EM signal is adjustable, and the gate driver has a stabilizing structure to reduce the voltage deviation caused by the high leakage current (ILeak) of LTPS TFTs; it keeps the EM signal at its lowest voltage level for 96.7% of the duration of a frame. Measurements indicate that the proposed structure shortens the falling time of the EM signal to 3.815 μ s, which is much shorter than a horizontal time of 46 μ s, yielding an EM signal with low distortion.

AB - This work proposes an emission (EM) gate driver that is based on p-type low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and VTH variation in LTPS TFTs is improved by enhancing the driving capability of the pull-down TFT. The pulse width of the EM signal is adjustable, and the gate driver has a stabilizing structure to reduce the voltage deviation caused by the high leakage current (ILeak) of LTPS TFTs; it keeps the EM signal at its lowest voltage level for 96.7% of the duration of a frame. Measurements indicate that the proposed structure shortens the falling time of the EM signal to 3.815 μ s, which is much shorter than a horizontal time of 46 μ s, yielding an EM signal with low distortion.

UR - http://www.scopus.com/inward/record.url?scp=85181569126&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85181569126&partnerID=8YFLogxK

U2 - 10.1109/LED.2023.3346393

DO - 10.1109/LED.2023.3346393

M3 - Article

AN - SCOPUS:85181569126

SN - 0741-3106

VL - 45

SP - 400

EP - 403

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Resolving Issues of V_THand I_Leakfor P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays

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