Resonant and Correlation Effects in the Tunnel Structures with Sequential 2D Electron Layers in a High Magnetic Field

Yu V. Dubrovskii, E. E. Vdovin, Yu N. Khanin, V. G. Popov, D. K. Maude, J. C. Portal, J. K. Maan, K. Wang, A. Balandin, T. G. Andersson, S. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Tunnelling between parallel two-dimensional electron gases (2DEG) in accumulation layers formed on both sides of the single doped AlGaAs barrier are examined in both zero and high magnetic field. Accumulation layers are separated from highly n-doped contact regions which freely supply electrons to the 2DEGs via 80 nm thick lightly n-doped spacer layers. Strongly oscillating current along the 2DEG's is absent in this arrangement. It is found that high magnetic field (v < 1) shifts resonant tunnelling between 2DEGs with different as grown electron concentrations from few millivolts position on the current-voltage dependence to zero external bias and suppresses tunnelling current, creating wide-asymmetric gap in the tunnelling density of states at the Fermi level arising from the in-plane Coulomb interaction in the 2DEGs in a high magnetic field.

Original languageEnglish
Pages (from-to)181-190
Number of pages10
JournalPhysics of Low-Dimensional Structures
Volume1999
Issue number3-4
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

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