Resonant cavity light-emitting diode

E. F. Schubert; Y. H. Wang; A. Y. Cho; L. W. Tu; G. J. Zydzik

doi:10.1063/1.106489

Resonant cavity light-emitting diode

E. F. Schubert, Y. H. Wang, A. Y. Cho, L. W. Tu, G. J. Zydzik

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

329 Citations (Scopus)

Abstract

A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light-emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top-emitting RCLED structure with AlAs/Al_xGa_1-xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top-emission intensity is a factor of 1.7 higher as compared to conventional LEDs.

Original language	English
Pages (from-to)	921-923
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	8
DOIs	https://doi.org/10.1063/1.106489
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106489

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title = "Resonant cavity light-emitting diode",

abstract = "A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light-emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top-emitting RCLED structure with AlAs/AlxGa1-xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top-emission intensity is a factor of 1.7 higher as compared to conventional LEDs.",

author = "Schubert, {E. F.} and Wang, {Y. H.} and Cho, {A. Y.} and Tu, {L. W.} and Zydzik, {G. J.}",

year = "1992",

doi = "10.1063/1.106489",

language = "English",

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pages = "921--923",

journal = "Applied Physics Letters",

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T1 - Resonant cavity light-emitting diode

AU - Schubert, E. F.

AU - Wang, Y. H.

AU - Cho, A. Y.

AU - Tu, L. W.

AU - Zydzik, G. J.

PY - 1992

Y1 - 1992

N2 - A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light-emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top-emitting RCLED structure with AlAs/AlxGa1-xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top-emission intensity is a factor of 1.7 higher as compared to conventional LEDs.

AB - A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light-emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top-emitting RCLED structure with AlAs/AlxGa1-xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top-emission intensity is a factor of 1.7 higher as compared to conventional LEDs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Resonant cavity light-emitting diode

Abstract

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