Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3

Shreyas Patankar; J. P. Hinton; Joel Griesmar; J. Orenstein; J. S. Dodge; Xufeng Kou; Lei Pan; Kang L. Wang; A. J. Bestwick; E. J. Fox; D. Goldhaber-Gordon; Jing Wang; Shou Cheng Zhang

doi:10.1103/PhysRevB.92.214440

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3

Shreyas Patankar, J. P. Hinton, Joel Griesmar, J. Orenstein, J. S. Dodge, Xufeng Kou, Lei Pan, Kang L. Wang, A. J. Bestwick, E. J. Fox, D. Goldhaber-Gordon, Jing Wang, Shou Cheng Zhang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV< ω<3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d≥2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d<8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.

Original language	English
Article number	214440
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	92
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevB.92.214440
Publication status	Published - 2015 Dec 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.92.214440

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Patankar, S., Hinton, J. P., Griesmar, J., Orenstein, J., Dodge, J. S., Kou, X., Pan, L., Wang, K. L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, J., & Zhang, S. C. (2015). Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3. Physical Review B - Condensed Matter and Materials Physics, 92(21), Article 214440. https://doi.org/10.1103/PhysRevB.92.214440

@article{96285860c1c94d0eb93db14e8ae4ae73,

title = "Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3",

abstract = "We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV< ω<3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d≥2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d<8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.",

author = "Shreyas Patankar and Hinton, {J. P.} and Joel Griesmar and J. Orenstein and Dodge, {J. S.} and Xufeng Kou and Lei Pan and Wang, {Kang L.} and Bestwick, {A. J.} and Fox, {E. J.} and D. Goldhaber-Gordon and Jing Wang and Zhang, {Shou Cheng}",

note = "Publisher Copyright: {\textcopyright} 2015 American Physical Society.",

year = "2015",

month = dec,

day = "31",

doi = "10.1103/PhysRevB.92.214440",

language = "English",

volume = "92",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "21",

}

Patankar, S, Hinton, JP, Griesmar, J, Orenstein, J, Dodge, JS, Kou, X, Pan, L, Wang, KL, Bestwick, AJ, Fox, EJ, Goldhaber-Gordon, D, Wang, J & Zhang, SC 2015, 'Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3', Physical Review B - Condensed Matter and Materials Physics, vol. 92, no. 21, 214440. https://doi.org/10.1103/PhysRevB.92.214440

TY - JOUR

T1 - Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3

AU - Patankar, Shreyas

AU - Hinton, J. P.

AU - Griesmar, Joel

AU - Orenstein, J.

AU - Dodge, J. S.

AU - Kou, Xufeng

AU - Pan, Lei

AU - Wang, Kang L.

AU - Bestwick, A. J.

AU - Fox, E. J.

AU - Goldhaber-Gordon, D.

AU - Wang, Jing

AU - Zhang, Shou Cheng

PY - 2015/12/31

Y1 - 2015/12/31

N2 - We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV< ω<3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d≥2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d<8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.

AB - We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV< ω<3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d≥2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d<8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.

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JO - Physical Review B - Condensed Matter and Materials Physics

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ER -

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1-x)2Te3

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