Resonant tunneling through a Si/GexSi1-x/Si heterostructure on a GeSi buffer layer

S. S. Rhee, J. S. Park, R. P.G. Karunasiri, Q. Ye, K. L. Wang

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)


Resonant tunneling of holes through an unstrained GeSi well between two strained Si barriers on a relaxed GeSi buffer layer has been observed for the first time. The peak-to-valley ratios of 2.1/1 at 4.2 K and 1.6/1 at 77 K in current-voltage characteristics were attained for light holes. Resonant tunneling from heavy-hole states was also observed at room temperature, as well as 77 and 4.2 K by conductance measurement. The positions of the resonance peaks are in good agreement with the light- and heavy-hole bound states in the quantum well.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Resonant tunneling through a Si/Ge<sub>x</sub>Si<sub>1-x</sub>/Si heterostructure on a GeSi buffer layer'. Together they form a unique fingerprint.

Cite this