Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

It was found that wafer charging during processing can cause the quasi-breakdown of gate oxide and lead to more than four orders of magnitude increase in gate leakage current. Gate oxides that have experienced this quasi-breakdown display minimal transistor parameter shifts under constant gate current stress because the stress field sustained across the oxide is low. As a result, large antenna devices, which experience significant wafer charging, have a greater percentage of oxides which have experienced quasi-breakdown and therefore display smaller than expected parameter shifts. To avoid misleading conclusions, an appropriate interpretation of the characterization results is necessary especially for thin gate oxides.