Revisit the electromigration effect: In situ synchrotron X-ray and scanning electron microscopy and ab initio calculations

Shih Kang Lin, Yu Chen Liu, Shang Jui Chiu, Yen Ting Liu, Hsin Yi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electromigration (EM) effect has been known to be atomic diffusion due to unbalanced electrostatic and electron-wind forces exerted on metal ions. Recent theoretical model on the mechanism were focused on the kinetics point of view. However, none of these models has coupled the EM effect and lattice stability. In this work, in situ current stressing experiments using synchrotron X-ray diffractometry and scanning electron microscopy with ab initio calculations based on density functional theory were performed for pure Cu strips. A new and novel mechanism of EM effect is revealed in this study, which enables the developments on new design rule for fine-pitch and high-power packaging.

Original languageEnglish
Title of host publication2017 International Conference on Electronics Packaging, ICEP 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages517-518
Number of pages2
ISBN (Electronic)9784990218836
DOIs
Publication statusPublished - 2017 Jun 5
Event2017 International Conference on Electronics Packaging, ICEP 2017 - Tendo, Yamagata, Japan
Duration: 2017 Apr 192017 Apr 22

Publication series

Name2017 International Conference on Electronics Packaging, ICEP 2017

Other

Other2017 International Conference on Electronics Packaging, ICEP 2017
CountryJapan
CityTendo, Yamagata
Period17-04-1917-04-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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