RF MEMS capacitive switch with leaky nanodiamond dielectric film

Changwei Chen, Yonhua Tzeng, Erhard Kohn, Chin Hung Wang, Jun Kai Mao

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

RF MEMS capacitive switches using leaky nanodiamond as a dielectric film are studied and compared with those using Si3N4. Characteristics of dielectric charging and discharging are analyzed at temperature ranging from - 196 °C to 150 °C. Electrical resistivity of leaky nanodiamond is measured to be lower than that of Si3N 4 by 3 to 6 orders of magnitude at room temperature. Trapped charges in leaky nanodiamond dielectric discharge much more quickly than those in Si3N4 while the power dissipation of nanodiamond based switches remains low. As a result, charge trapping induced shift in electrostatic actuation voltage is greatly reduced compared to that with Si 3N4 and becomes non-detectable under the reported conditions. RF MEMS capacitive switches based on leaky nanodiamond dielectric are, therefore, more reliable than those with Si3N4.

Original languageEnglish
Pages (from-to)546-550
Number of pages5
JournalDiamond and Related Materials
Volume20
Issue number4
DOIs
Publication statusPublished - 2011 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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