Robust bi-stable memory operation in single-layer graphene ferroelectric memory

Emil B. Song; Bob Lian; Sung Min Kim; Sejoon Lee; Tien Kan Chung; Minsheng Wang; Caifu Zeng; Guangyu Xu; Kin Wong; Yi Zhou; Haider I. Rasool; David H. Seo; Hyun Jong Chung; Jinseong Heo; Sunae Seo; Kang L. Wang

doi:10.1063/1.3619816

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

Emil B. Song, Bob Lian, Sung Min Kim, Sejoon Lee, Tien Kan Chung, Minsheng Wang, Caifu Zeng, Guangyu Xu, Kin Wong, Yi Zhou, Haider I. Rasool, David H. Seo, Hyun Jong Chung, Jinseong Heo, Sunae Seo, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

149 Citations (Scopus)

Abstract

With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT.

Original language	English
Article number	042109
Journal	Applied Physics Letters
Volume	99
Issue number	4
DOIs	https://doi.org/10.1063/1.3619816
Publication status	Published - 2011 Jul 25

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3619816

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@article{4cf48a61ba924a82968860d8d715d283,

title = "Robust bi-stable memory operation in single-layer graphene ferroelectric memory",

abstract = "With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT.",

author = "Song, {Emil B.} and Bob Lian and {Min Kim}, Sung and Sejoon Lee and Chung, {Tien Kan} and Minsheng Wang and Caifu Zeng and Guangyu Xu and Kin Wong and Yi Zhou and Rasool, {Haider I.} and Seo, {David H.} and Chung, {Hyun Jong} and Jinseong Heo and Sunae Seo and Wang, {Kang L.}",

note = "Funding Information: E.B.S. and K.L.W. acknowledges financial support from the MARCO Focus Center on Functional Engineered Nano Architectonics (FENA) and the NSF IGERT Materials Creation Training Program, grant DGE-11443. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2011",

month = jul,

day = "25",

doi = "10.1063/1.3619816",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Robust bi-stable memory operation in single-layer graphene ferroelectric memory

AU - Song, Emil B.

AU - Lian, Bob

AU - Min Kim, Sung

AU - Lee, Sejoon

AU - Chung, Tien Kan

AU - Wang, Minsheng

AU - Zeng, Caifu

AU - Xu, Guangyu

AU - Wong, Kin

AU - Zhou, Yi

AU - Rasool, Haider I.

AU - Seo, David H.

AU - Chung, Hyun Jong

AU - Heo, Jinseong

AU - Seo, Sunae

AU - Wang, Kang L.

N1 - Funding Information: E.B.S. and K.L.W. acknowledges financial support from the MARCO Focus Center on Functional Engineered Nano Architectonics (FENA) and the NSF IGERT Materials Creation Training Program, grant DGE-11443. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/7/25

Y1 - 2011/7/25

N2 - With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT.

AB - With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT.

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Robust bi-stable memory operation in single-layer graphene ferroelectric memory

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