Robust High-k HfOxNy n-MOSFETs Using Low Work Function TbN Gate

Shui-Jinn Wang, Nai Chao Sui, Chien Hung Wu, Chen Kuo Chiang, Ching-Cheng Cheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	International Conference on Solid State Devices and materials (SSDM'07)
Place of Publication	Tsukuba International Congress Center, Ibaraki, Japan
Publication status	Published - 2007 Sept 18

Cite this

@inproceedings{e386b1feb89e490aa33a73468fa59c91,

title = "Robust High-k HfOxNy n-MOSFETs Using Low Work Function TbN Gate",

author = "Shui-Jinn Wang and Sui, {Nai Chao} and Wu, {Chien Hung} and Chiang, {Chen Kuo} and Ching-Cheng Cheng",

year = "2007",

month = sep,

day = "18",

language = "English",

booktitle = "International Conference on Solid State Devices and materials (SSDM'07)",

}

TY - GEN

T1 - Robust High-k HfOxNy n-MOSFETs Using Low Work Function TbN Gate

AU - Wang, Shui-Jinn

AU - Sui, Nai Chao

AU - Wu, Chien Hung

AU - Chiang, Chen Kuo

AU - Cheng, Ching-Cheng

PY - 2007/9/18

Y1 - 2007/9/18

M3 - Conference contribution

BT - International Conference on Solid State Devices and materials (SSDM'07)

CY - Tsukuba International Congress Center, Ibaraki, Japan

ER -