Role of annealing in constant period of voltage stress on the burn-in effect suppression of InGaP/GaAs heterojunction bipolar transistors

Kwok Keung Chong, Fenq Lin Jenq, Mau Phon Houng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Rapid thermal annealing (RTA) is proved to be more efficient in dissociating hydrogen complexes than using a constant period of voltage stress (CPVS). Without waiting for the bond breaking of complexes by minority carrier injection, RTA favors the critical base-emitter voltage (VBE) responsible for the occurrence of burn-in (BI) from 1.75 to 1.4 V and thus assists CPVS in reducing VBE by about 25% used in BI suppression. Besides eliminating the BI, the sample first prepared by RTA and followed by CPVS has larger base and collector current densities at VBE > 1.1 V and reaches 6 times those at VBE > 1.3 V compared with the sample only using by CPVS.

Original languageEnglish
Pages (from-to)974-976
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number3 A
DOIs
Publication statusPublished - 2007 Mar 8

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Role of annealing in constant period of voltage stress on the burn-in effect suppression of InGaP/GaAs heterojunction bipolar transistors'. Together they form a unique fingerprint.

  • Cite this