Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions

J. C.A. Huang, C. Y. Hsu, Y. F. Liao, M. Z. Lin, C. H. Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effects of metal-insulator interfacial roughness, modulated by Ar+ irradiation, on bias dependence of tunnel magnetoresistance (TMR) and electrical transport of CoFe-Al Ox -CoFe magnetic tunnel junctions (MTJs) have been studied. Reduction of TMR ratio and asymmetric TMR falloff curves as a function of dc bias have been observed for Ar+ -irradiated MTJs. The results are analyzed by x-ray reflectivity together with complex impedance techniques, indicating interfacial roughness which likely results in a proportional rising trap state density (TSD). Increasing TSD for Ar+ -irradiated MTJs increases an unpolarized current which decreases TMR ratio. The asymmetric TMR falloff curves are attributed to the different TSDs of bottom and top CoFe-Al Ox interfaces in tunneling process.

Original languageEnglish
Article number103504
JournalJournal of Applied Physics
Volume98
Issue number10
DOIs
Publication statusPublished - 2005 Nov 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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