Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

E. Kuokstis; C. Q. Chen; M. E. Gaevski; W. H. Sun; J. W. Yang; G. Simin; M. Asif Khan; H. P. Maruska; D. W. Hill; M. M.C. Chou; J. J. Gallagher; B. H. Chai

doi:10.1557/proc-743-l5.3

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

E. Kuokstis
, C. Q. Chen
, M. E. Gaevski
, W. H. Sun
, J. W. Yang
, G. Simin
, M. Asif Khan
, H. P. Maruska
, D. W. Hill
, M. M.C. Chou
, J. J. Gallagher
, B. H. Chai

Program on Key Materials

Research output: Contribution to journal › Conference article › peer-review

Abstract

The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1 1̄00]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm²) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2-1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

Original language	English
Pages (from-to)	331-336
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	743
DOIs	https://doi.org/10.1557/proc-743-l5.3
Publication status	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 6

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-743-l5.3

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Kuokstis, E., Chen, C. Q., Gaevski, M. E., Sun, W. H., Yang, J. W., Simin, G., Asif Khan, M., Maruska, H. P., Hill, D. W., Chou, M. M. C., Gallagher, J. J., & Chai, B. H. (2002). Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells. Materials Research Society Symposium - Proceedings, 743, 331-336. https://doi.org/10.1557/proc-743-l5.3

@article{44f75690b02d4c5abe909c84b5409fc0,

title = "Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells",

abstract = "The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1 {\=1}00]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2-1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.",

author = "E. Kuokstis and Chen, \{C. Q.\} and Gaevski, \{M. E.\} and Sun, \{W. H.\} and Yang, \{J. W.\} and G. Simin and \{Asif Khan\}, M. and Maruska, \{H. P.\} and Hill, \{D. W.\} and Chou, \{M. M.C.\} and Gallagher, \{J. J.\} and Chai, \{B. H.\}",

year = "2002",

doi = "10.1557/proc-743-l5.3",

language = "English",

volume = "743",

pages = "331--336",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

}

TY - JOUR

T1 - Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

AU - Kuokstis, E.

AU - Chen, C. Q.

AU - Gaevski, M. E.

AU - Sun, W. H.

AU - Yang, J. W.

AU - Simin, G.

AU - Asif Khan, M.

AU - Maruska, H. P.

AU - Hill, D. W.

AU - Chou, M. M.C.

AU - Gallagher, J. J.

AU - Chai, B. H.

PY - 2002

Y1 - 2002

N2 - The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1 1̄00]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2-1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

AB - The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1 1̄00]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2-1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

UR - https://www.scopus.com/pages/publications/0038034009

UR - https://www.scopus.com/pages/publications/0038034009#tab=citedBy

U2 - 10.1557/proc-743-l5.3

DO - 10.1557/proc-743-l5.3

M3 - Conference article

AN - SCOPUS:0038034009

SN - 0272-9172

VL - 743

SP - 331

EP - 336

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

Abstract

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