ROLES OF N//2 O IN CF//4 plus N//2 O PLASMA ETCHING OF SILICON AND PHOTORESIST.

Yon-Hua Tzeng, T. H. Lin, J. L. Davidson, B. Z. Jang

Research output: Contribution to conferencePaperpeer-review

Abstract

Plasma-assisted etching of single-crystalline silicon and positive photoresist in CF//4 plus N//2 O and CF//4 plus O//2 mixtures was studied as a function of gas compositions in RF-generated plasmas using both a barrel reactor and a parallell-plate reactor. Higher etch rates for silicon and lower etch rates for photoresist are observed in barrel-reactor plasma etching using CF//4 plus N//2 O than are observed for CF//4 plus O//2 mixtures under the same etching conditions. With the aid of ion bombardment, the silicon etch rates are found to be higher under some conditions while lower under others in CF//4 plus N//2 O plasmas. The lack of molecular oxygen and lower concentration of atomic oxygen in the CF//4 plus N//2 O plasma (as contrasted with CF//4 plus O//2 mixtures) is postulated to be a major factor in the etch rate difference. Basic mechanisms responsible for these differences are discussed.

Original languageEnglish
Pages28-33
Number of pages6
Publication statusPublished - 1985 Dec 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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