Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime

H. S. Hsu; C. P. Lin; H. Chou; J. C.A. Huang

doi:10.1063/1.3000015

Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime

H. S. Hsu, C. P. Lin, H. Chou, J. C.A. Huang

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29 Citations (Scopus)

Abstract

Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration ∼ 10 ¹⁹ cm^-3) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic diluted magnetic oxide (DMO) effect with spin polarized carriers. The contribution to the DMO effect depends on the types of carriers and how they incorporated into the electric conduction, magnetic coupling, and the coupling between them. These findings can provide useful information in the study of the origin of RT ferromagnetism in ZnO-based DMO and for further application in spintronics.

Original language	English
Article number	142507
Journal	Applied Physics Letters
Volume	93
Issue number	14
DOIs	https://doi.org/10.1063/1.3000015
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3000015

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title = "Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime",

abstract = "Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration ∼ 10 19 cm-3) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic diluted magnetic oxide (DMO) effect with spin polarized carriers. The contribution to the DMO effect depends on the types of carriers and how they incorporated into the electric conduction, magnetic coupling, and the coupling between them. These findings can provide useful information in the study of the origin of RT ferromagnetism in ZnO-based DMO and for further application in spintronics.",

author = "Hsu, {H. S.} and Lin, {C. P.} and H. Chou and Huang, {J. C.A.}",

note = "Funding Information: This project is supported by the National Science Council in Taiwan under Grant No. NSC-95-2112-M-110-011-MY3. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

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language = "English",

volume = "93",

journal = "Applied Physics Letters",

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T1 - Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime

AU - Hsu, H. S.

AU - Lin, C. P.

AU - Chou, H.

AU - Huang, J. C.A.

PY - 2008

Y1 - 2008

N2 - Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration ∼ 10 19 cm-3) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic diluted magnetic oxide (DMO) effect with spin polarized carriers. The contribution to the DMO effect depends on the types of carriers and how they incorporated into the electric conduction, magnetic coupling, and the coupling between them. These findings can provide useful information in the study of the origin of RT ferromagnetism in ZnO-based DMO and for further application in spintronics.

AB - Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration ∼ 10 19 cm-3) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic diluted magnetic oxide (DMO) effect with spin polarized carriers. The contribution to the DMO effect depends on the types of carriers and how they incorporated into the electric conduction, magnetic coupling, and the coupling between them. These findings can provide useful information in the study of the origin of RT ferromagnetism in ZnO-based DMO and for further application in spintronics.

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Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime

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