Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime

H. S. Hsu, C. P. Lin, H. Chou, J. C.A. Huang

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Observation of the room temperature (RT) anomalous Hall effect (AHE) and ferromagnetism in semiconducting like (carrier concentration ∼ 10 19 cm-3) Co-doped ZnO samples is reported. These small AHE signals match quantitatively with the magnetic hysteresis and can be correspondent to the intrinsic diluted magnetic oxide (DMO) effect with spin polarized carriers. The contribution to the DMO effect depends on the types of carriers and how they incorporated into the electric conduction, magnetic coupling, and the coupling between them. These findings can provide useful information in the study of the origin of RT ferromagnetism in ZnO-based DMO and for further application in spintronics.

Original languageEnglish
Article number142507
JournalApplied Physics Letters
Volume93
Issue number14
DOIs
Publication statusPublished - 2008 Oct 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Room temperature anomalous Hall effect in Co doped ZnO thin films in the semiconductor regime'. Together they form a unique fingerprint.

  • Cite this