In this paper, a new functional GaAs switching transistor is demonstrated. A sawtooth δ-Doped superlattice is introduced between anode and cathode. Holes, created by the avalanche multiplications near the metal-semiconductor (M-S) junction, play an important role in the transport properties. An attractive S-shaped negative differential resistance (NDR) phenomenon in the experimental current-voltage characteristics is observed. Furthermore, with proper operation of the third electrode, gate, the studied structure performs a controllable switching characteristics.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91-08-27 → 91-08-29|
All Science Journal Classification (ASJC) codes