Room temperature characteristics of GaAs δ-doped superlattice switching transistor

W. C. Liu, C. Y. Sun, W. S. Lour, D. F. Guo, Y. S. Lee

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, a new functional GaAs switching transistor is demonstrated. A sawtooth δ-Doped superlattice is introduced between anode and cathode. Holes, created by the avalanche multiplications near the metal-semiconductor (M-S) junction, play an important role in the transport properties. An attractive S-shaped negative differential resistance (NDR) phenomenon in the experimental current-voltage characteristics is observed. Furthermore, with proper operation of the third electrode, gate, the studied structure performs a controllable switching characteristics.

Original languageEnglish
Pages368-370
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91-08-2791-08-29

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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