Abstract
In this paper, a new functional GaAs switching transistor is demonstrated. A sawtooth δ-Doped superlattice is introduced between anode and cathode. Holes, created by the avalanche multiplications near the metal-semiconductor (M-S) junction, play an important role in the transport properties. An attractive S-shaped negative differential resistance (NDR) phenomenon in the experimental current-voltage characteristics is observed. Furthermore, with proper operation of the third electrode, gate, the studied structure performs a controllable switching characteristics.
Original language | English |
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Pages | 368-370 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 1991 |
Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29 |
Other
Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
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City | Yokohama, Jpn |
Period | 91-08-27 → 91-08-29 |
All Science Journal Classification (ASJC) codes
- General Engineering