Room-temperature diamond seeding and microwave plasma enhanced CVD growth of nanodiamond with a tungsten interfacial layer

Yueh Chieh Chu, Gerald Jiang, Chi Chang, Jyh Ming Ting, Hsin Le Lee, Yonhua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports on room-temperature high-density diamond seeding for low-temperature microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond (NCD) on W/Si substrates. A tungsten layer acts as a diamond nucleation-enhancing layer. Formation of tungsten-carbide (WC) complex increases the initial nucleation density and plays an important role in facilitating diamond growth characteristics. Microwave plasma-enhanced chemical vapor deposition is applied to synthesize diamond films in Ar diluted by methane without hydrogen additives at low temperature. NCD seeding and film formation were investigated as a function of the thickness of tungsten interfacial layer. Raman spectroscopy, SEM, AFM and TEM were applied to characterize NCD films in order to gain insight into the initial stage of NCD diamond synthesis.

Original languageEnglish
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages1367-1370
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: 2011 Aug 152011 Aug 19

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period11-08-1511-08-19

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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