Room-temperature direct patterning of crystalline inorganic materials on organic substrates by on-site solution reaction

R. Teranishi, T. Fujiwara, T. Watanabe, Masahiro Yoshimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Crystalline inorganic films such as cadmium sulfide and lead sulfide have been fabricated on porous substrates by direct patterning with a solution reaction at a room temperature. A piezoelectric drop-on-demand ink jet printer was used in order to fabricate these films. This method is quite environmentally friendly because it is the solution reaction through ink jet printing at room temperature without any firing/heating treatment. The optional patterning of these compounds in the width of 100 μm was successfully obtained. In addition the optical properties as absorbance and luminescence of these films were investigated. The present method seems to be applicable to fabricate films or to make patterning of various functional materials.

Original languageEnglish
Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages961-964
Number of pages4
Publication statusPublished - 2000 Dec 1
EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States
Duration: 2000 Nov 52000 Nov 8

Publication series

NameProceedings of the Second International Conference on Processing Materials for Properties

Conference

ConferenceProceedings of the Second International Conference on Processing Materials for Properties
CountryUnited States
CitySan Francisco, CA
Period00-11-0500-11-08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Room-temperature direct patterning of crystalline inorganic materials on organic substrates by on-site solution reaction'. Together they form a unique fingerprint.

Cite this