Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered ZrxSi1-xO2 Gate Dielectrics

Pang Yi Liu; Shui-Jinn Wang; Chien Hsiung Hung; Chien Hung Wu; Nai Sheng Wu; Yen Hao-Ping; Tseng Hsing Lin

Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered ZrxSi1-xO2 Gate Dielectrics

Pang Yi Liu, Shui-Jinn Wang, Chien Hsiung Hung, Chien Hung Wu, Nai Sheng Wu, Yen Hao-Ping , Tseng Hsing Lin

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2016 International Conference on Solid State Devices and Materials (SSDM’16)
Place of Publication	Tsukuba, Japan
Publication status	Published - 2016 Sept 26

Cite this

@inproceedings{9499409fd5e5465d9e93ae27f0370272,

title = "Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered ZrxSi1-xO2 Gate Dielectrics",

author = "Liu, {Pang Yi} and Shui-Jinn Wang and Hung, {Chien Hsiung} and Wu, {Chien Hung} and Wu, {Nai Sheng} and Yen Hao-Ping and Lin, {Tseng Hsing}",

year = "2016",

month = sep,

day = "26",

language = "English",

booktitle = "2016 International Conference on Solid State Devices and Materials (SSDM{\textquoteright}16)",

}

TY - GEN

T1 - Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered ZrxSi1-xO2 Gate Dielectrics

AU - Liu, Pang Yi

AU - Wang, Shui-Jinn

AU - Hung, Chien Hsiung

AU - Wu, Chien Hung

AU - Wu, Nai Sheng

AU - Hao-Ping , Yen

AU - Lin, Tseng Hsing

PY - 2016/9/26

Y1 - 2016/9/26

M3 - Conference contribution

BT - 2016 International Conference on Solid State Devices and Materials (SSDM’16)

CY - Tsukuba, Japan

ER -